2

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

Year:
2006
Language:
english
File:
PDF, 338 KB
english, 2006
8

MOCVD methods for fabricating GaAs quantum wires and quantum dots

Year:
1992
Language:
english
File:
PDF, 333 KB
english, 1992
9

MOVPE growth of single-crystal hexagonal AlN on cubic diamond

Year:
2009
Language:
english
File:
PDF, 446 KB
english, 2009
10

RF High-Power Operation of AlGaN/GaN HEMTs Epitaxially Grown on Diamond

Year:
2012
Language:
english
File:
PDF, 357 KB
english, 2012
19

Origin of growth defects in CVD diamond epitaxial films

Year:
2008
Language:
english
File:
PDF, 814 KB
english, 2008
20

High RF output power for H-terminated diamond FETs

Year:
2006
Language:
english
File:
PDF, 259 KB
english, 2006
22

Influence of epitaxy on the surface conduction of diamond film

Year:
2004
Language:
english
File:
PDF, 979 KB
english, 2004
24

Diamond-based electronics for RF applications

Year:
2004
Language:
english
File:
PDF, 552 KB
english, 2004
26

Beryllium-doped single-crystal diamond grown by microwave plasma CVD

Year:
2009
Language:
english
File:
PDF, 438 KB
english, 2009
27

Aluminum nitride deep-ultraviolet light-emitting p–n junction diodes

Year:
2008
Language:
english
File:
PDF, 879 KB
english, 2008
28

High-pressure and high-temperature annealing effects of boron-implanted diamond

Year:
2008
Language:
english
File:
PDF, 392 KB
english, 2008
47

Spontaneous Ridge Formation and Its Effect on Field Emission of Heavily Si-Doped AlN

Year:
2001
Language:
english
File:
PDF, 289 KB
english, 2001